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lifetime buy last order 31jul04 last ship 31jan05 1 mrf374 motorola rf device data the rf mosfet line n?channel enhancement?mode lateral mosfet designed f or broadband commercial and industrial applications with frequen- cies from 470 ? 860 mhz. the high gain and broadband performance of this device m ake it ideal for large?signal, common source amplifier applications in 28 volt transmitter equipment. ? typical two?tone performance @ 860 mhz, 28 volts, narrowband fixture output power ? 100 watts pep power gain ? 13.5 db efficiency ? 36% imd ? ?31 dbc ? typical performance at 860 mhz, 28 volts, broadband fixture output power ? 100 watts pep power gain ? 12 db efficiency ? 36% imd ? ?34 dbc ? 100% tested for load mismatch stress at all phase angles with 5:1 vswr @ 28 vdc, 860 mhz, 100 watts cw ? excellent thermal stability ? characterized with differential large?signal impedance parameters maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs 20 vdc drain current ? continuous (per side) i d 7 adc total device dissipation @ t c = 25 c derate above 25 c p d 270 1.25 w w/ c storage temperature range t stg ? 65 to +150 c operating junction temperature t j 200 c thermal characteristics characteristic symbol max unit thermal resistance, junction to case r jc 0.65 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf374/d semiconductor technical data 470 ? 860 mhz, 100 w, 28 v lateral n?channel broadband rf power mosfet case 375f?04, style 1 ni?650 ? motorola, inc. 2002 rev 5
lifetime buy last order 31jul04 last ship 31jan05 mrf374 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?source breakdown voltage (per side) (v gs = 0 vdc, i d =1 a per side) v (br)dss 65 ? ? vdc zero gate voltage drain current (per side) (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (per side) (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (per side) (v ds = 10 v, i d = 200 a per side) v gs(th) 2 3.5 4 vdc gate quiescent voltage (per side) (v ds = 28 v, i d = 100 ma per side) v gs(q) 3 4.2 5 vdc drain?source on?voltage (per side) (v gs = 10 v, i d = 3 a per side) v ds(on) ? 0.56 0.8 vdc forward transconductance (per side) (v ds = 10 v, i d = 3 a per side) g fs 2.2 2.8 ? s dynamic characteristics (1) input capacitance (per side) (v ds = 28 v, v gs = 0 v, f = 1 mhz) c iss ? 80 ? pf output capacitance (per side) (v ds = 28 v, v gs = 0 v, f = 1 mhz) c oss ? 45 ? pf reverse transfer capacitance (per side) (v ds = 28 v, v gs = 0 v, f = 1 mhz) c rss ? 3.5 ? pf functional characteristics, two?tone testing (2) common source power gain (v dd = 28 vdc, p out = 100 w pep, i dq = 400 ma, f1 = 857 mhz, f2 = 863 mhz) g ps 12.5 13.5 ? db drain efficiency (v dd = 28 vdc, p out = 100 w pep, i dq = 400 ma, f1 = 857 mhz, f2 = 863 mhz) 30 36 ? % intermodulation distortion (v dd = 28 vdc, p out = 100 w pep, i dq = 400 ma, f1 = 857 mhz, f2 = 863 mhz) imd ?28 ?31 ? db load mismatch (v dd = 28 vdc, p out = 100 w cw, i dq = 400 ma, f = 860 mhz, vswr 5:1 at all phase angles of test) no degradation in output power typical two?tone broadband common source power gain (v dd = 28 vdc, p out = 100 w pep, i dq = 500 ma, f1 = 857 mhz, f2 = 863 mhz) g ps ? 12 ? db drain efficiency (v dd = 28 vdc, p out = 100 w pep, i dq = 500 ma, f1 = 857 mhz, f2 = 863 mhz) ? 36 ? % intermodulation distortion (v dd = 28 vdc, p out = 100 w pep, i dq = 500 ma, f1 = 857 mhz, f2 = 863 mhz) imd ? ?34 ? db (1) each side of device measured separately. (2) measured in push?pull configuration.
lifetime buy last order 31jul04 last ship 31jan05 3 mrf374 motorola rf device data figure 1. narrowband component layout vertical balun mounting detail mrf374
lifetime buy last order 31jul04 last ship 31jan05 mrf374 4 motorola rf device data figure 2. narrowband test circuit table 1. narrowband component designations and values designation description c1 0.3 pf, atc, case b c2 3.0 pf, atc, case b c3, c5 1.8 pf, atc, case b c4a, b, c12a, b 47 pf, atc, case b c6 10 pf, atc, case b c7a, b 68 pf, atc, case b c8a, b 10 f, 35 v kemet p/n t491d106k35as c9a, b 15 pf, atc, case b c10 5.6 pf, atc, case b c11 5.1 pf, atc, case b c12 3.0 pf, atc, case b c13a, b 2.2 f, 100 v, vishay p/n vj3640y225kxbat c14a, b 22 f, 35 v kemet p/n t491d226k35as l1a, b 5.0 nh, coilcraft p/n a02t l2a, b 8.0 nh, coilcraft p/n a03t r1a, b 180 ? , vishay dale chip resistor, 1/4 w (1210) r2 10 ? , dale axial carbon resistor, 1 w r3a, b 3.3 k ? , vishay dale chip resistor (1206) pcb mrf374 printed circuit board rev 03, rogers ro4350, height 30 mils, = 3.48 balun b1a, b 860 mhz vertical balun, 4:1 impedance translation (i.e., 12.5 : 50 ), printed circuit board rev 01, rogers ro3010, height 50 mils, = 10.2 connectors n?type (female), m/a?com p/n 3052?1648?10 heatsink motorola p/n 99?1rh?2c 3 x 5 bedstead insert motorola p/n 99?7ri?1d insert for ldmos 650 in 3 x 5 bedstead protective cover motorola p/n 99?2pc?2b end plates 2) motorola p/n 94?7gb?1epl, end plate for type?n connector banana jack and nut 2) johnson p/n 108?0904?001 brass banana jack 2) h.h. smith p/n sm?101
lifetime buy last order 31jul04 last ship 31jan05 5 mrf374 motorola rf device data typical two?tone narrowband characteristics figure 3. power gain versus peak output power figure 4. intermodulation distortion versus peak output power figure 5. drain efficiency versus peak output power figure 6. performance in narrowband test circuit ? figure 7. capacitance versus voltage ? ? ?
lifetime buy last order 31jul04 last ship 31jan05 mrf374 6 motorola rf device data figure 8. broadband component layout vertical balun mounting detail mrf374
lifetime buy last order 31jul04 last ship 31jan05 7 mrf374 motorola rf device data table 2. broadband component designations and values designation description c1 0.8 pf, atc, case b c2 8.2 pf, atc, case b c3a, b, c14a, b 100 pf, atc, case b c4 7.5 pf, atc, case b c5 3.0 pf, atc, case b c6 9.1 pf, atc, case b c7 15 pf, atc, case b c8a, b 12 pf, atc, case b c9a, b 4.7 pf, atc, case b c10 10 pf, atc, case b c11 3.6 pf, atc, case b c12 3.0 pf, atc, case b c13 2.7 pf, atc, case b c15a, b 3.3 f, 100 v, vitramon p/n vj3640y335kxbat c16a, b 22 f, 35 v, kemet p/n t491d226k035as c17a, b 3.9 pf, atc, case b c18a, b 2.2 f, 50 v, vitramon p/n vj2225y225kxaat c19 10 f, 35 v, kemet p/n t491d106k035as l1a, b, l3a, b, l4, l5 8.0 nh, coilcraft p/n a03t l2, l6 12.5 nh, coilcraft p/n a04t r1a, b 22 ? , vishay dale chip resistor, 1/4 w (1206) r2a, b, r7a, b 10 ? , vishay dale chip resistor, 1/4 w (1206) r3 390 ? , vishay dale chip resistor (1206) r4 2.4 k ? , vishay dale chip resistor (1206) r5t 470 ? thermistor, koa speer mot p/n 0680149m01 r6 6.8 k ?, vishay dale resistor, 1/2 w (axial lead) pcb mrf374 printed circuit board rev 03, rogers ro4350, height 30 mils, = 3.48 balun b1, b2 vertical 660 mhz broadband balun, printed circuit board rev 01, rogers ro3010, height 50 mils, = 10.2 f mhz z in ? z ol * ? 470 660 860 5.79 ? j0.97 3.16 + j3.73 4.52 + j0.50 4.54 + j2.82 4.21 + j3.04 3.86 + j3.44 table 3. broadband push?pull balanced fixture impedances z in = input impedance from the transistor. z ol * = complex conjugate of the optimum load at a given voltage, p1db, gain, efficiency, bias current and frequency. note: z in and z ol are measured impedances taken from gate?to?gate and drain?to? drain, respectively.
lifetime buy last order 31jul04 last ship 31jan05 mrf374 8 motorola rf device data typical two?tone broadband characteristics figure 9. broadband intermodulation distortion versus output power figure 10. broadband power gain versus output power figure 11. broadband efficiency versus output power ? ? ?
9 mrf374 motorola rf device data notes
mrf374 10 motorola rf device data notes
11 mrf374 motorola rf device data notes
mrf374 12 motorola rf device data package dimensions d f e h r (lid) q 2x c
case 375f?04 issue d k 4 pl
g l b b (flange) m n t (insulator) (lid) a (flange) s (insulator) a ni?650 motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation, or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? param eters can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for e ach customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purch ase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employe es, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly o r indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent & trademark office. all other product or service names are the property of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola, inc. 2002. how to reach us: usa/europe/locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 1?303?675?2140 or 1?800?441?2447 japan : motorola japan ltd.; sps, technical information center, 3?20?1, minami?az abu. minato?ku, tokyo 106?8573 japan. 8 1?3?3440?3569 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 da i king street, tai po industrial estate, tai po, n.t. hong kon g. 852?26668334 technical information center: 1?800?521?6274 home page : http://www .motorola.com/semiconductors/ mrf374/d ?

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